Main method
FET/TFT
When to use
Transistor devices with transfer curves or 4PP conductance curves.
Required data
linear: VG + ID; saturation: VG + ID; 4PP: VG + G4PP.
Required metadata
linear: W, L, Ci, VDS; saturation: W, L, Ci; 4PP: W, D4PP, Ci. Ci is normalized internally to F/m².
Formula path
Linear windows fit |ID| versus VG; saturation windows fit √|ID| versus VG. Multiple current-dynamic-range scales are tested, every window uses all contained points, and mobility magnitude never decides the recommended window. 4PP retains its conductance fit.
Audit output
A/B/C/D curve-evidence grade; recommended or limited-evidence mobility; r = recommended mobility / the P90 of qualified windows in the same stable plateau, balanced across current position and window scale; no current multiplier is privileged; the absolute maximum remains a separate diagnostic; selected current and VG ranges, points, fit interval, endpoint sensitivity, residual and slope-stability checks, cross-scale evidence, sweep difference, warnings, and provenance.
Caveats
A and B support a recommendation; C gives a limited reference value; D gives no single mobility. The grade evaluates this curve only. The result remains apparent two-probe mobility and cannot remove contact, ionic or digitisation effects.