Method Guide

SCLC and FET/TFT extraction guide

PeroMobility uses standard measurement protocols, not a universal formula. Select the method that matches the experiment, provide the required data and metadata, and review apparent mobility with an audit trail.

Current method

SCLC

Analyze

When to use

Vertical single-carrier devices with a J-V curve that can be evaluated against a Mott-Gurney-like regime.

Required data

voltage + current_density, or voltage + current with device area.

Required metadata

active-layer thickness L, relative dielectric constant epsilon_r, and device area A when current must be converted to current density.

Formula path

Fit J vs V^2 in the selected SCLC-like region, then invert the Mott-Gurney relation for apparent SCLC mobility.

Audit output

fitting range, logJ-logV slope, J vs V^2 fit, R2, n_points, warnings, credibility, comparability, and provenance.

Caveats

The result depends on correct metadata, physical regime selection, and data quality. Cross-protocol comparison is not implied.

Current method

FET/TFT

Analyze

When to use

Transistor devices with transfer curves or 4PP conductance curves.

Required data

linear: VG + ID; saturation: VG + ID; 4PP: VG + G4PP.

Required metadata

linear: W, L, Ci, VDS; saturation: W, L, Ci; 4PP: W, D4PP, Ci. Ci is normalized internally to F/m2.

Formula path

Use the selected mode path: linear dID/dVG, saturation d(sqrt(ID))/dVG, or 4PP dG4PP/dVG.

Audit output

extraction mode, fitting range, slope, R2, n_points, warnings, credibility, comparability, and provenance.

Caveats

Contact effects, hysteresis, ionic gating, and unit ambiguity can affect interpretation. Results remain protocol-specific apparent mobility.

Future protocols

Other protocol families are not active in the current user workflow. They are reserved for future plugin-style extensions after SCLC and FET/TFT are consolidated.