Analysis Workspace

FET/TFT mobility calculation

Upload a transfer or 4PP curve, enter the device parameters, and calculate.

Method Guide Additional: SCLC

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Choose extraction mode

Required data: VG, ID. Required metadata: W, L, Ci, VDS.

Upload, template, or sample

Upload CSV / XLSXDownload CSV template

Single sweep: VG, ID. Paired sweeps: VG + ID_forward + ID_reverse.

Data sourceThis changes provenance and reliability guards, never the formula.

Advanced input options

Digitize from figure is an advanced input path and is not part of the main workflow. Use it only when a clean CSV is unavailable.

Open digitize figure tool

Fill metadata

Channel width W *

Channel length L *

Current unit *Per channel width

For µA/µm, choose µA and /µm.

Gate dielectric Ci *

Enter Ci as reported (papers usually use nF/cm²). Internally normalized to F/m² for calculation.

Drain voltage VDS (V) *

Required by μlin = L·|dID/dVG|/(W·Ci·|VDS|); changing VDS changes the calculated mobility.

Optional data-quality control: measured current floor

If the instrument noise or quantisation floor is known, enter it in the same current unit and per-width basis selected above. Leave blank when unknown; the report will clearly label the automatic bottom-1% analysis floor as not being an instrument-noise estimate.

An optional CSV column named IG or gate_current is also checked; a window is rejected when |IG| exceeds 10% of |ID|.

Choose extraction mode

Upload, template, or sample

Fill metadata

Run analysis